| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f50b20893d85608b690f06b6f8a024c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5397fc5ff75ee49a454558b68b36baa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_af16e5f838424d0516c5627f3e65f3a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fb583e2d95d4d3a86ce5a93aa6aa0e9b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0428e15ba8ebdf437d72f90599ea803 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41758
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-685 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2009-01-30^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-08-13^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e122c0b3edc6471e2327b90cc6adf208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_362a4b8b63beb3c4ef0da5504ee95ba7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7620dadbf6f343928a1c1fbf1082d293
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d12bfdcfec85cfe746be836051df78f6 |
| publicationDate |
2013-08-13^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8507968-B2 |
| titleOfInvention |
Memristive transistor memory |
| abstract |
A memory device ( 100 ) includes a semiconductor wire including a source region ( 132 ), a drain region ( 134 ), and a channel region ( 130 ) between the source region ( 132 ) and the drain region ( 134 ). A gate structure that overlies the channel region includes a memristive portion ( 120 ) and a conductive portion ( 110 ) overlying the memristive portion ( 120 ). |
| priorityDate |
2009-01-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |