| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_49bfa9290e773cb5e0408069fc24118c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_104cdc028007882dd01d23e78a2148b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3345c63953fd3f517688efe5030cf78f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 |
| filingDate |
2010-10-22^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-09-03^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aeb94a28c7956865866fabbb8d7c875b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e4ec101c6b7754d77a685d7471e1044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abf721e7415e8910088b4172673c25e8 |
| publicationDate |
2013-09-03^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8524546-B2 |
| titleOfInvention |
Formation of multi-height MUGFET |
| abstract |
A method and structure comprise a field effect transistor structure that includes a first rectangular fin structure and a second rectangular fin structure, both positioned on a substrate. The sides of the second rectangular fin structure are parallel to the sides of the first rectangular fin structure. Further, a trench insulator is positioned on the substrate and positioned between a side of the first rectangular fin structure and a side of the second rectangular fin structure. A gate conductor is positioned on the trench insulator, positioned over the sides and the top of the first rectangular fin structure, and positioned over the sides and the top of the second rectangular fin structure. The gate conductor runs perpendicular to the sides of the first rectangular fin structure and the sides of the second rectangular fin structure. Also, a gate insulator is positioned between the gate conductor and the first rectangular fin structure and between the gate conductor and the second rectangular fin structure. The gate conductor is positioned adjacent to a relatively larger portion of the sides of the second rectangular fin structure and is positioned adjacent to a relatively smaller portion of the sides of the first rectangular fin structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014035069-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9564369-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9922868-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016276210-A1 |
| priorityDate |
2010-10-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |