| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3fbca9672e73d87c9ed2b1568b43317a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0ac78bc9b69cdacc494ce198bafe6489
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7c40604b0a6eee436372e529a0d0d75f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_acfabc4fdc5e1583804a8c5f4a775e83
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f8ec0891bf1288bc85dccd81e096ec2c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_302684304f7ad736bd2c9a3bacc94969 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02447 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 |
| filingDate |
2010-11-09^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-09-24^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6be2e438fd5587a8ddb44e4b13ab6d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1618f79e34600f89e9cd9aa14d3f746f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8692ecd2ae52256bcb7bf15edac2098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff589ec1af19f2a7890b304e78cdab47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bce7ee409b475ac377aba2348a789548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_080ee78b81a37606f3a0f56de5978401 |
| publicationDate |
2013-09-24^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8541769-B2 |
| titleOfInvention |
Formation of a graphene layer on a large substrate |
| abstract |
A single crystalline silicon carbide layer can be grown on a single crystalline sapphire substrate. Subsequently, a graphene layer can be formed by conversion of a surface layer of the single crystalline silicon layer during an anneal at an elevated temperature in an ultrahigh vacuum environment. Alternately, a graphene layer can be deposited on an exposed surface of the single crystalline silicon carbide layer. A graphene layer can also be formed directly on a surface of a sapphire substrate or directly on a surface of a silicon carbide substrate. Still alternately, a graphene layer can be formed on a silicon carbide layer on a semiconductor substrate. The commercial availability of sapphire substrates and semiconductor substrates with a diameter of six inches or more allows formation of a graphene layer on a commercially scalable substrate for low cost manufacturing of devices employing a graphene layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10236347-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I630280-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11721547-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014264374-A1 |
| priorityDate |
2010-11-09^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |