| abstract |
A method of forming a reversible resistance-switching metal-insulator-metal structure is provided, the method including forming a first non-metallic conducting layer, forming a non-conducting layer above the first non-metallic conducting layer, forming a second non-metallic conducting layer above the non-conducting layer, etching the first non-metallic conducting layer, non-conducting layer and second non-metallic conducting layer to form a pillar, and disposing a carbon material layer about a sidewall of the pillar. Other aspects are also provided. |