| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa3031d029b487ad216a1bed80d38d4d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6e3134a8c086008af6ff6aa6020dd74a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_72588d082a2209ad6aeb7a7f2153c0ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cbc215371ca9d4d6f9e09c15ed156396 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate |
2010-01-07^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-10-15^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89949548012211b07105d220a837599c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99a067f2f3a1480a5107495439df2155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bffa1e33489001d745632c9c787bb8cc |
| publicationDate |
2013-10-15^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8557702-B2 |
| titleOfInvention |
Plasma-enhanced atomic layers deposition of conductive material over dielectric layers |
| abstract |
Methods of forming a conductive metal layer over a dielectric layer using plasma enhanced atomic layer deposition (PEALD) are provided, along with related compositions and structures. A plasma barrier layer is deposited over the dielectric layer by a non-plasma atomic layer deposition (ALD) process prior to depositing the conductive layer by PEALD. The plasma barrier layer reduces or prevents deleterious effects of the plasma reactant in the PEALD process on the dielectric layer and can enhance adhesion. The same metal reactant can be used in both the non-plasma ALD process and the PEALD process. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9466574-B2 |
| priorityDate |
2009-02-02^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |