http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8619219-B2

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filingDate 2012-07-19^^<http://www.w3.org/2001/XMLSchema#date>
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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a55d23aeda95fb2ffff2fe00f4cdea0f
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publicationDate 2013-12-31^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8619219-B2
titleOfInvention Thin film transistor, display device and liquid crystal display device and method for manufacturing the same
abstract As a wiring becomes thicker, discontinuity of an insulating film covering the wiring has become a problem. It is difficult to form a wiring with width thin enough for a thin film transistor used for a current high definition display device. As a wiring is made thinner, signal delay due to wiring resistance has become a problem. In view of the above problems, the invention provides a structure in which a conductive film is formed in a hole of an insulating film, and the surfaces of the conductive film and the insulating film are flat. As a result, discontinuity of thin films covering a conductive film and an insulating film can be prevented. A wiring can be made thinner by controlling the width of the hole. Further, a wiring can be made thicker by controlling the depth of the hole.
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