| abstract |
An insulated-gate field-effect transistor (110, 114, or 122) is fabricated so that its gate dielectric layer ( 500, 566, or 700 ) contains nitrogen having a vertical concentration profile specially tailored to prevent boron in the overlying gate electrode ( 502, 568, or 702 ) from significantly penetrating through the gate dielectric layer into the underlying channel zone ( 484, 554, or 684 ) while simultaneously avoiding the movement of nitrogen from the gate dielectric layer into the underlying semiconductor body. Damage which could otherwise result from undesired boron in the channel zone and from undesired nitrogen in the semiconductor body is substantially avoided. |