http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8674360-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ca4466e8d532b2b989a7e1eb28a786b5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1277 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2011-07-26^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-03-18^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd369aff2da1152feb8391e0007ba745 |
| publicationDate | 2014-03-18^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8674360-B2 |
| titleOfInvention | Semiconductor device having first gate electrode and second gate electrode |
| abstract | A separation layer is formed over a substrate, an insulating film 107 is formed over the separation layer, a bottom gate insulating film 103 is formed over the insulating film 107 , an amorphous semiconductor film is formed over the bottom gate insulating film 103 , the amorphous semiconductor film is crystallized to form a crystalline semiconductor film over the bottom gate insulating film 103 , a top gate insulating film 105 is formed over the crystalline semiconductor film, top gate electrodes 106 a and 106 b are formed over the top gate insulating film 105 , the separation layer is separated from the insulating film 107 , the insulating film 107 is processed to expose the bottom gate insulating film 103 , and bottom gate electrodes 115 a and 115 b in contact with exposed the gate insulating film 103 are formed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012187488-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9093316-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012231620-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9123814-B2 |
| priorityDate | 2007-07-17^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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