| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_621b75b48ee63889b1ba0343720c7b0a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f0db38975024cc55cdbda0825acb2d06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fadcae3196ca725b795713aa49cd9f1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-1114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-1121
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-1143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3286 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F41-307
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3254 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-82 |
| filingDate |
2012-09-12^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-03-25^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86aca6600824b3ff1dd05c1c9fcd18f8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddba944e5150320d16d90047497ef570 |
| publicationDate |
2014-03-25^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8679577-B2 |
| titleOfInvention |
Magnetic memory cell construction |
| abstract |
A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization orientation of the magnetic layer is in the stack film plane and out-of-plane magnetic memory cells where the magnetization orientation of the magnetic layer is out of the stack film plane, e.g., perpendicular to the stack plane. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10043967-B2 |
| priorityDate |
2008-08-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |