http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8731852-B2

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filingDate 2011-09-28^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-05-20^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60b7cb5e96d26048fcfc4d9198af78ce
publicationDate 2014-05-20^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8731852-B2
titleOfInvention Method for analysing photovoltaic layer systems using thermography
abstract A method for the evaluative analysis of a photovoltaic layer system is described. The method applies to a semiconductor layer forming a pn junction: an electric current is generated in the layer system; a spatially resolved thermal image of the surface of the layer system is generated; an intensity distribution of the thermal radiation relative to the respective number of pixels with the same intensity value is determined; an intensity mean/median from the intensity distribution is determined; an intensity interval based on a specifiable measure for a scattering of the intensity distribution is determined; a characteristic number is determined; and the characteristic number or a calculation value based thereon is compared with a specifiable reference characteristic number.
priorityDate 2010-09-28^^<http://www.w3.org/2001/XMLSchema#date>
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