| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a0f26a9c2efad3ae086a108f3c04b57d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5c3ce8f5568f2eeda76ad82046aa4240 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02595
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02592
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02667
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2010-11-30^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-07-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0381c40049d50128c9ccffe7c1692a2a |
| publicationDate |
2014-07-22^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8785305-B2 |
| titleOfInvention |
Backside stress compensation for gallium nitride or other nitride-based semiconductor devices |
| abstract |
A method includes forming a stress compensation layer over a first side of a semiconductor substrate and forming a Group III-nitride layer over a second side of the substrate. Stress created on the substrate by the Group III-nitride layer is at least partially reduced by stress created on the substrate by the stress compensation layer. Forming the stress compensation layer could include forming a stress compensation layer from amorphous or microcrystalline material. Also, the method could include crystallizing the amorphous or microcrystalline material during subsequent formation of one or more layers over the second side of the substrate. Crystallizing the amorphous or microcrystalline material could occur during subsequent formation of the Group III-nitride layer and/or during an annealing process. The amorphous or microcrystalline material could create no or a smaller amount of stress on the substrate, and the crystallized material could create a larger amount of stress on the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11322599-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2570057-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2570057-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9590060-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10535763-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021138018-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021017669-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9536966-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10347591-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9536967-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10629681-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10224401-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11121216-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9318593-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10043898-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9935190-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018053269-A1 |
| priorityDate |
2009-12-11^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |