| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4933
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4975 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7806
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0839 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2014-01-16^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-07-29^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08af9bba4534ae05485a5640a063b6c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb0ba0acac9dba764380365ec40ba39d |
| publicationDate |
2014-07-29^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8790983-B2 |
| titleOfInvention |
Semiconductor device and method for manufacturing the same |
| abstract |
A semiconductor device according to an embodiment includes a silicon carbide, a metal silicide formed on the silicon carbide and including a first layer and a second layer having a carbon ratio lower than that of the first layer, and a metallic electrode formed on the metal silicide, wherein the second layer is formed on the first layer, and the second layer is in contact with the metallic electrode, and an average grain diameter of a metal silicide in the second layer is larger than an average grain diameter of a metal silicide in the first layer. |
| priorityDate |
2011-09-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |