http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8828786-B2

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f187eb8cb31e70d4acd428dd8beedd4f
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-105
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72
filingDate 2013-01-15^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-09-09^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1eb521341c76133947edee1e62c85e20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44ed48019453b632a6c8446d34b7c9d8
publicationDate 2014-09-09^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8828786-B2
titleOfInvention Method of fabricating photodiode
abstract A light-absorbing layer is composed of a compound-semiconductor film of chalcopyrite structure, a surface layer is disposed on the light-absorbing layer, the surface layer having a higher band gap energy than the compound-semiconductor film, an upper electrode layer is disposed on the surface layer, and a lower electrode layer is disposed on a backside of the light-absorbing layer in opposition to the upper electrode layer, the upper electrode layer and the lower electrode layer having a reverse bias voltage applied in between to detect electric charges produced by photoelectric conversion in the compound-semiconductor film, as electric charges due to photoelectric conversion are multiplied by impact ionization, while the multiplication by impact ionization of electric charges is induced by application of a high-intensity electric field to a semiconductor of chalcopyrite structure, allowing for an improved dark-current property, and an enhanced efficiency even in detection of low illumination intensities, with an enhanced S/N ratio.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019199942-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9583536-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11095834-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I576843-B
priorityDate 2009-05-19^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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