http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8829558-B2

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3639b5b0ff4dc00e333ab93106b050c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2da5e737de0770da9f92c709ebec5fb4
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20
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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36
classificationIPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36
filingDate 2012-03-27^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-09-09^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39417f991de9f3e2446e9f393419a8ba
publicationDate 2014-09-09^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8829558-B2
titleOfInvention Semiconductor light-emitting device
abstract The present disclosure relates to a semiconductor light-emitting device, which includes: a plurality of semiconductor layers composed of a first semiconductor layer, a second semiconductor layer, and an active layer; a first electrode disposed on the second semiconductor layer; a high-resistance body interposed between the second semiconductor layer and the first electrode; and a light-transmitting conductive film having an opening through which the high-resistance body is exposed, the first electrode being brought into contact with the light-transmitting conductive film, which is disposed on the high-resistance body, and the high-resistance body, which is exposed through the opening.
priorityDate 2011-04-19^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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