| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a013f27aee93b16ee05c95b0d161b734
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0ee33b0e3e7398cf6fc957eeee59d510 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-58 |
| filingDate |
2012-12-28^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-10-14^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9334c4d40dbeda7df57dc59425e7fb5d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f48b6f813d3766ae9ed769053a70fe23
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75c9be1dddb68b40da7dd38e07aeeef0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0325387e5f6fda8e715b907e91a95e43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_911b5a19673f0626bbe3f51e5fdb9b46 |
| publicationDate |
2014-10-14^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8859308-B2 |
| titleOfInvention |
Method for making light emitting diode |
| abstract |
A method for making a light emitting diode is provided. In the method, a substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are grown on the epitaxial growth surface in series. The first semiconductor layer, the active layer, and the second semiconductor layer constitute a source layer. A metallic plasma generating layer is then formed on a surface of the source layer away from the substrate. A first optical symmetric layer is then disposed on a surface of the metallic plasma generating layer. A first electrode is applied on an exposed surface of the first semiconductor layer. A second electrode is applied to electrically connect with the second semiconductor layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10090437-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015364647-A1 |
| priorityDate |
2012-06-07^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |