| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3eeac7038a74f2a67c3379835144e32b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4193a97be592ac81e7baedfe42f628a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_826c85c7a9a2785b1abfe8b5aa8ac509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0838778da9df17b49ada7113c8c7b0a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5ebdef5a75176069a25694890a60be93 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2252 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-08 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22 |
| filingDate |
2011-08-30^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-11-18^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4124879f68d3fc2443a7955c52fa777f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21461f2ee6a7d03fd8784928ec589909
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b03190efa879535a8650eb4c6f8837c1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_123475a5f8a8e9514c0c6de3f9d255a8 |
| publicationDate |
2014-11-18^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8889536-B2 |
| titleOfInvention |
Method for forming a dopant profile |
| abstract |
A method is provided for forming a dopant profile based on a surface of a wafer-like semiconductor component with phosphorus as a dopant. The method includes the steps of applying a phosphorus dopant source onto the surface, forming a first dopant profile with the dopant source that is present on the surface, removing the dopant source, and forming a second dopant profile that has a greater depth in comparison to the first dopant profile. In order to form an optimized dopant profile, the dopant source is removed after forming the first dopant profile, and precipitates that are crystallized selectively on or in the surface from the precipitates Si x P y and Si x P y O z are removed. |
| priorityDate |
2010-08-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |