| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2013-05-03^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-01-13^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f03a5d4f4cba78bf3a6c1ad139d2cef2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eab39c93a7dab8f225f9688d3b96ceed |
| publicationDate |
2015-01-13^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8933461-B2 |
| titleOfInvention |
III-nitride enhancement mode transistors with tunable and high gate-source voltage rating |
| abstract |
A semiconductor device includes an enhancement mode GaN FET with a depletion mode GaN FET electrically coupled in series between a gate node of the enhancement mode GaN FET and a gate terminal of the semiconductor device. A gate node of the depletion mode GaN FET is electrically coupled to a source node of the enhancement mode GaN FET. A source node of said enhancement mode GaN FET is electrically coupled to a source terminal of the semiconductor device, a drain node of the enhancement mode GaN FET is electrically coupled to a drain terminal of said semiconductor device, and a drain node of the depletion mode GaN FET is electrically coupled to a gate terminal of the semiconductor device. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021531655-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10516043-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11594628-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021141327-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10861963-B2 |
| priorityDate |
2012-08-09^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |