http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8975610-B1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242789508fcc9b52c84a82ac211a6774
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-80
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-20
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00
filingDate 2013-12-23^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-03-10^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b6756a9fb0ce309bac4600180cccbc1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69a801665fc160abe9aafb6ce7e6e931
publicationDate 2015-03-10^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8975610-B1
titleOfInvention Silicon based selector element
abstract Control elements that can be suitable for nonvolatile memory device applications are disclosed. The control element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. The control element can be based on multilayer dielectric stacks. The control element can include a titanium oxide-silicon-titanium oxide multilayer stack. Electrode materials may include one of ruthenium, titanium nitride, or carbon. The control element can include a silicon nitride-silicon-silicon nitride multilayer stack. Electrode materials may include titanium nitride.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9431459-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10803937-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016071584-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10424371-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019067574-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9711213-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10476002-B2
priorityDate 2013-12-23^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7646630-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7947898-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010139747-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6608713-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012326113-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8198618-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010061142-A1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23950
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID454541533
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID61685
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419558793
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID414004986
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID162134096
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID93091
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID450705782
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559581
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID26042
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419593465
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707770
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559362
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6336543
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID297

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