Predicate |
Object |
assignee |
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classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7783 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7789 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-267 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-072 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0328 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-109 |
filingDate |
2009-01-08^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2015-06-02^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b52fc377620c38fbf1b62c70c1d8bee5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32ad54e26b7e6499edd56c490997ca36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afd1dd62d7adcdb433b25b6e27583625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a62aa7a45ab852cb651beb85a681bfdd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f016ce2246d825543cbffc0dd53a0851 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d2fb116aab975b089762b05982a3250 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43a3c9414b60448ba63e458cf97329e7 |
publicationDate |
2015-06-02^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9048302-B2 |
titleOfInvention |
Field effect transistor having semiconductor operating layer formed with an inclined side wall |
abstract |
A field effect transistor has an MOS structure and is formed of a nitride based compound semiconductor. The field effect transistor includes a substrate; a semiconductor operating layer having a recess and formed on the substrate; an insulating layer formed on the semiconductor operating layer including the recess; a gate electrode formed on the insulating layer at the recess; and a source electrode and a drain electrode formed on the semiconductor operating layer with the recess in between and electrically connected to the semiconductor operating layer. The recess includes a side wall inclined relative to the semiconductor operating layer. |
priorityDate |
2008-01-11^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |