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filingDate 2009-01-08^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-06-02^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b52fc377620c38fbf1b62c70c1d8bee5
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publicationDate 2015-06-02^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9048302-B2
titleOfInvention Field effect transistor having semiconductor operating layer formed with an inclined side wall
abstract A field effect transistor has an MOS structure and is formed of a nitride based compound semiconductor. The field effect transistor includes a substrate; a semiconductor operating layer having a recess and formed on the substrate; an insulating layer formed on the semiconductor operating layer including the recess; a gate electrode formed on the insulating layer at the recess; and a source electrode and a drain electrode formed on the semiconductor operating layer with the recess in between and electrically connected to the semiconductor operating layer. The recess includes a side wall inclined relative to the semiconductor operating layer.
priorityDate 2008-01-11^^<http://www.w3.org/2001/XMLSchema#date>
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