| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c177c1ddc8c9680d0062eb75e3b1d206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e55034fd535414556d8cb31dc2ce752
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e49bfa42d30d71024dda30c38396a2c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_06b59b451f13887bdee19119f3822ad3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-265 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B31-0233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 |
| filingDate |
2006-05-11^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-05-10^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e475aac49444490b2fff055a4eb831c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85b16af29a37cc60ee1d550fff7d6cc5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee3dad952198e395a634dd58e9417794 |
| publicationDate |
2016-05-10^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9334167-B2 |
| titleOfInvention |
Nanostructure production methods and apparatus |
| abstract |
The present invention relates to a method of forming nanostructures or nanomaterials. The method comprises providing a thermal control barrier on a substrate and forming the nanostructures or nanomaterials. The method may, for example, be used to form carbon nanotubes by plasma enhanced chemical vapor deposition using a carbon containing gas plasma: The temperature of the substrate may be maintained at less than 350° C. while the carbon nanotubes are formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11558937-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10112214-B2 |
| priorityDate |
2005-05-11^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |