| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate |
2014-12-22^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-06-21^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_826b4a7de7875602d334b86fca131fc2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74bb981ea1d08731e68abe871800725c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e08d91ff19fce642276d4cd68e163970
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71f10a26e2d9850951862dc8892f581e |
| publicationDate |
2016-06-21^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9373550-B2 |
| titleOfInvention |
Selectively degrading current resistance of field effect transistor devices |
| abstract |
A method includes selectively degrading a current capacity of a first finned-field-effect-transistor (finFET) relative to a second finFET by forming a material on a fin of the first finFET to increase a current resistance of the first finFET. The second finFET is electrically connected to the first finFET in a circuit such that a current flow through the second finFET is a multiple of a current flow through the first finFET. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9859280-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016359044-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10833175-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9985032-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10361210-B2 |
| priorityDate |
2014-04-23^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |