| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L41-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-076
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-074
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L41-0805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L41-1873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-1051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-8542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L41-332 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-332 |
| filingDate |
2014-05-12^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-07-05^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f8b1bd78d4e12aefe1ab72e37d37104
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3d16a17807eb5c0469d0bc1339e03b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a6f79a1e505472f51b296fd9af935ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c53b2ccf5bb8353f3855422f40585c56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5a2e9639f142e55edae0c515797cba9 |
| publicationDate |
2016-07-05^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9385297-B2 |
| titleOfInvention |
Method for manufacturing niobate-system ferroelectric thin film device |
| abstract |
There is provided a method for manufacturing a niobate-system ferroelectric thin film device, including: a lower electrode film formation step of forming a lower electrode film on a substrate; a niobate-system ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask formation step of forming a desired etch mask pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of forming a desired fine pattern of the niobate-system ferroelectric thin film by wet etching using an etchant including an aqueous alkaline solution of a chelating agent. |
| priorityDate |
2013-08-29^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |