http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9449686-B2

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publicationDate 2016-09-20^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9449686-B2
titleOfInvention Resistive memory device, resistive memory system and method of operating the resistive memory device
abstract A method of operating a resistive memory device and a resistive memory system including a resistive memory device is for a resistive memory device including a plurality of bit lines and at least one dummy bit line. The method of operating the resistive memory device includes detecting a first address accompanying a first command, generating a plurality of inhibit voltages for biasing non-selected lines, and providing to a first dummy bit line a first inhibit voltage selected from among the plurality of inhibit voltages based on a result of detecting the first address.
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