http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9530683-B2

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filingDate 2014-11-06^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-12-27^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_199477384251dab3b895cd8a4f1babab
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publicationDate 2016-12-27^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9530683-B2
titleOfInvention Forming source/drain zones with a dielectric plug over an isolation region between active regions
abstract An embodiment includes forming an isolation region between first and second active regions in a semiconductor, forming an opening between the first and second active regions by removing a portion of the isolation region, and forming a dielectric plug within the opening so that the dielectric plug is between the first and second active regions and so that a portion of the dielectric plug extends below upper surfaces of the first and second active regions. The dielectric plug may be formed of a dielectric material having a lower removal rate than a dielectric material of the isolation region for a particular isotropic removal chemistry.
priorityDate 2012-01-04^^<http://www.w3.org/2001/XMLSchema#date>
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