http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9536949-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c19a91365ed494d9fe27d24190d4459f |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1066 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0843 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate | 2015-12-03^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-01-03^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1dd85f5b6461deec6dc09dd29693f37 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3a3870eaba7dd899e26d171ddcbd4b0 |
| publicationDate | 2017-01-03^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9536949-B2 |
| titleOfInvention | Nitride semiconductor device comprising nitride semiconductor regrowth layer |
| abstract | A nitride semiconductor device according to one embodiment of the present disclosure includes: a substrate; a first nitride semiconductor layer supported by the substrate; a second nitride semiconductor layer disposed on the first nitride semiconductor layer; a source-side nitride semiconductor regrowth layer which is located on a source-side recess region; a drain-side nitride semiconductor regrowth layer which is located on a drain-side recess region located apart from the source-side recess region; a first diffusion layer which is disposed in the first nitride semiconductor layer and contains Ge diffused from the source-side nitride semiconductor regrowth layer; and a second diffusion layer which is disposed in the first nitride semiconductor layer and contains Ge diffused from the drain-side nitride semiconductor regrowth layer. |
| priorityDate | 2014-12-11^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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