| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac5ed9c97100186e56186a2764f06e8c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1157
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11524 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11293
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B20-65
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-112
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate |
2016-07-27^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-03-07^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d853208073cf5ac0e4e8e9e76a9a2658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2df315b0278049d291f996702949519 |
| publicationDate |
2017-03-07^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9589973-B2 |
| titleOfInvention |
Pillar-shaped semiconductor memory device and method for producing the same |
| abstract |
A pillar-shaped semiconductor memory device includes a silicon pillar, and a tunnel insulating layer, a data charge storage insulating layer, a first interlayer insulating layer, and a first conductor layer, which surround an outer periphery of the silicon pillar in that order, and a second interlayer insulating layer that is in contact with an upper surface or a lower surface of the first conductor layer. A side surface of the second interlayer insulating layer facing a side surface of the first interlayer insulating layer is separated from the side surface of the first interlayer insulating layer with a distance therebetween, the distance being larger than a distance from the side surface of the first interlayer insulating layer to a side surface of the first conductor layer facing the side surface of the first interlayer insulating layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11325104-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11731107-B2 |
| priorityDate |
2014-06-10^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |