| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57341227c065dbddd1d3cf801bbaa86a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0692
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02694
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66492
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66659 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate |
2015-10-22^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-04-04^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb77e607d364bef224c24f50f9813b4a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af55439f9f1c93d0d1c64ea3ab4fdb76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0673632a24b73cf47b44de64c1b0a082 |
| publicationDate |
2017-04-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9614078-B1 |
| titleOfInvention |
Metal-oxide field effect transistor having an oxide region within a lightly doped drain region |
| abstract |
A semiconductor device and a method for manufacturing the same are provided. A semiconductor device includes a semiconductor substrate and a gate structure formed on the semiconductor substrate. A source region and a drain region are disposed on opposite sides of the gate structure on the semiconductor substrate. A lightly-doped drain region is adjacent to a side of the drain region close to the gate structure, and a lightly-doped source region is adjacent to a side of the source region close to the gate structure. An oxidation region is disposed in the lightly-doped drain region. A trench extends from the surface of the semiconductor substrate to the drain region. A source electrode is disposed on the source region, and the drain electrode has a first portion disposed on the drain region and a second portion disposed in the trench. |
| priorityDate |
2015-10-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |