| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ca748d5cbfb6d9d2f2c6013230fccd73 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-097
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0292
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-0025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-007 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-00 |
| filingDate |
2016-04-01^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-04-18^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5510fb70248f6525a3bb335a7934efd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21cd654ac656c103be6b2532a014e24b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_877c6e8daec03457f375cae7e8c80b31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b8553d8b721a75fb34dc7ce79b4d411 |
| publicationDate |
2017-04-18^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9624094-B1 |
| titleOfInvention |
Hydrogen barriers in a copper interconnect process |
| abstract |
A microelectronic system including hydrogen barriers and copper pillars for wafer level packaging and method of fabricating the same are provided. Generally, the method includes: forming an insulating hydrogen barrier over a surface of a first chip; exposing at least a portion of an electrical contact electrically coupled to a component in the first chip by removing a portion of the insulating hydrogen barrier, the component including a material susceptible to degradation by hydrogen; forming a conducting hydrogen barrier over at least the exposed portion of the electrical contact; and forming a copper pillar over the conducting hydrogen barrier. In one embodiment, the material susceptible to degradation is lead zirconate titanate (PZT) and the microelectronic systems device is a ferroelectric random access memory including a ferroelectric capacitor with a PZT ferroelectric layer. Other embodiments are also disclosed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10283443-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017207147-A1 |
| priorityDate |
2015-11-13^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |