| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 |
| filingDate |
2015-06-16^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-08-08^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6516ff4731606efdd4e628b6a3412c7 |
| publicationDate |
2017-08-08^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9728615-B2 |
| titleOfInvention |
Fin shape contacts and methods for forming fin shape contacts |
| abstract |
Semiconductor devices and methods for forming the devices with fin contacts. One method includes, for instance: obtaining a wafer with at least one isolation region; forming at least one fin on the wafer; forming at least one sacrificial contact; forming at least one sacrificial gate; etching to recess the at least one fin; growing an epitaxial material over the at least one fin; performing replacement metal gate to the at least one sacrificial gate; depositing an interlayer dielectric layer; and forming at least one fin contact. An intermediate semiconductor device is also disclosed. |
| priorityDate |
2015-06-16^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |