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publicationDate 2017-09-05^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9755058-B2
titleOfInvention Surface devices within a vertical power device
abstract A semiconductor device comprises a vertical power device, such as a superjunction MOSFET, an IGBT, a diode, and the like, and a surface device that comprises one or more lateral devices that are electrically active along a top surface of the semiconductor device.
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