| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b25bdab3319b3eb2437cef578bc03297 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-15 |
| filingDate |
2015-08-17^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-09-26^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00880da5da76f7cd68b552f5e58b7de4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_153072851722a0d23df8b2bc476190a1 |
| publicationDate |
2017-09-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9773896-B2 |
| titleOfInvention |
Layer structure for a group-III-nitride normally-off transistor |
| abstract |
A layer structure for a normally-off transistor has an electron-supply layer made of a group-III-nitride material, a back-barrier layer made of a group-III-nitride material, a channel layer between the electron-supply layer and the back-barrier layer, made of a group-III-nitride material having a band-gap energy that is lower than the band-gap energies of the other layer mentioned. The material of the back-barrier layer is of p-type conductivity, while the material of the electron-supply layer and the material of the channel layer are not of p-type conductivity, the band-gap energy of the electron-supply layer is smaller than the band-gap energy of the back-barrier layer. In absence of an external voltage a lower conduction-band-edge of the third group-III-nitride material in the channel layer is higher in energy than a Fermi level of the material in the channel layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019103482-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11699749-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11094814-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020020790-A1 |
| priorityDate |
2013-02-15^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |