| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2015-06-25^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-10-10^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_adc3755b0baddc46b44a146d02c6622d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57206638f22b4d9100fcac3d3034b991
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f85a74846ab9a9ac1b23c108b5e0f584
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0757a82bc9b98937c7c6a877f82e77d |
| publicationDate |
2017-10-10^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9786550-B2 |
| titleOfInvention |
Low resistance metal contacts to interconnects |
| abstract |
A semiconductor device and a method of fabricating a contact to interface with an interconnect in a semiconductor device are described. The device includes a dielectric layer formed on a semiconductor layer, and a contact fabricated in a via formed within the dielectric layer. An interconnect formed above the contact interfaces with an exposed surface of the contact opposite a surface closest to the semiconductor layer. The contact includes a contact material in a first portion of the contact and an interface metal in a second portion of the contact. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10381263-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10685915-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10529663-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10559649-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10373866-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10998227-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10937732-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11502033-B2 |
| priorityDate |
2015-06-25^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |