| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2af4fa54541ffebbf8d9c243383df60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b6caea61bfde8a45e01a8deabff80d97 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32055 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1157
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11582
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11582
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1157 |
| filingDate |
2014-12-04^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-10-17^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69b58897ae624298bb75803205591ffa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d5157c71050e9523e24f07b42e89793 |
| publicationDate |
2017-10-17^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9793288-B2 |
| titleOfInvention |
Methods of fabricating memory device with spaced-apart semiconductor charge storage regions |
| abstract |
Methods of fabricating semiconductor devices, such as monolithic three-dimensional NAND memory string devices, include selectively forming semiconductor material charge storage regions over first material layers exposed on a sidewall of a front side opening extending through a stack comprising an alternating plurality of first and second material layers using a difference in incubation time for the semiconductor material on the first material relative to an incubation time for the semiconductor material on the second material of the stack. In other embodiments, a silicon layer is selectively deposited on silicon nitride on a surface having at least one first portion including silicon oxide and at least one second portion including silicon nitride using a difference in an incubation time for the silicon on silicon nitride relative to an incubation time for the silicon on silicon oxide. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10354859-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018166460-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016307913-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10068914-B2 |
| priorityDate |
2014-12-04^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |