| abstract |
A resistive random access memory device is provided with a tunneling insulator layer between a resistance change layer and a bottom electrode. Thus, it is possible: to raise the selection (on/off) ratio by the current of a direct tunneling induced by low voltage in the unselected cell and the current of an F-N tunneling induced by high voltage in the selected cell, to efficiently suppress the leakage current in the read operation, to make a low current operation less μA level by controlling the thickness of the tunneling insulator layer, and to be simultaneously fabricated together with circuit devices by forming the bottom electrodes (word lines) with a semiconductor material. |