| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_461514df460e0cdd5644e86ba60adbf7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a9c5f05e5636f5b5f77737497ec51567 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2014-10-07^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-11-07^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7190e489bf1e98f3a5929c9cc51e2e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_027591adb557b3971ff78596dd467c00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cb2526c89e7627eed47abded4fcdb4c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e09136bf661d2cae1cb191578da430db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7684ee4052a29736f6df89d698bcb919 |
| publicationDate |
2017-11-07^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9812395-B2 |
| titleOfInvention |
Methods of forming an interconnect structure using a self-ending anodic oxidation |
| abstract |
A method of forming low-k interconnect structure is disclosed, which comprises: providing at least one protruding structure on a substrate traversing between a first connection region to a second connection region defined thereon; performing anodic oxidation on the substrate having the protruding structure; forming one or more nanowire interconnect in the protruding structure traversing between the first connection region and the second connection region; the nanowire interconnect being surrounded by a dielectric layer formed during the anodic oxidation. |
| priorityDate |
2014-10-07^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |