| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1157
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42344
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1157
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate |
2016-03-04^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-11-28^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e14e5be18664ac20b58800fcc22111ea |
| publicationDate |
2017-11-28^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9831092-B2 |
| titleOfInvention |
Semiconductor device and method for manufacturing the same |
| abstract |
A semiconductor device includes a control gate electrode and a memory gate electrode which are formed over the main surface of a semiconductor substrate in a memory cell region, and a first electrode and a second electrode which are formed over the main surface of the semiconductor substrate in a shunt region. The first electrode is formed integrally with the control gate electrode, and the second electrode is formed integrally with the memory gate electrode. The second electrode includes a first section formed along the side wall of the first electrode, and a second section extending along the main surface of the semiconductor substrate. Also, the height of the upper surface of the first electrode with respect to the main surface of the semiconductor substrate is generally same to the height of the upper surface of the first section of the second electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10325921-B2 |
| priorityDate |
2015-03-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |