| abstract |
The invention concerns a structure of a CMOS active pixel, comprising a semi-conductive substrate ( 1 ) of a first type, at least one first photodiode operating in photovoltaic mode comprising a photovoltaic conversion area ( 2 ) defined by a doped area of a second type forming a PN junction with the substrate, said first photodiode re-emitting photoelectric charge carriers collected by the PN junction during the exposure of said first photodiode to a light, at least one second photodiode operating in integration mode and reverse-biased, said second photodiode comprising a charge accumulation area ( 3 ) defined by a doped area of the second type forming a PN junction with the substrate, said charge accumulation area being exposed to the charge carriers from the photovoltaic conversion area ( 2 ) in order to accumulate such charge carriers. |