| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9047b16961c0aee78d7de367969339b2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L49-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-881
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate |
2016-09-15^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-04-24^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecb5df52289c8a8e100dfc2fbb3cf780
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ec78c927064101cba8d258f7a68dc03 |
| publicationDate |
2018-04-24^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9954167-B2 |
| titleOfInvention |
Memory device including a layer including hafnium oxide and method for manufacturing the same |
| abstract |
According to one embodiment, a memory device includes a first layer, a second layer, and a third layer provided between the first layer and the second layer. The first layer includes first interconnections and a first insulating portion. The first interconnections extend in a first direction. The first insulating portion is provided between the first interconnections. The second layer includes a plurality of second interconnections and a second insulating portion. The second interconnections extend in a second direction crossing the first direction. The second insulating portion is provided between the second interconnections. The third layer includes a ferroelectric portion and a paraelectric portion. The ferroelectric portion and the paraelectric portion include hafnium oxide. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10510862-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11437403-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11380773-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022093615-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11723211-B2 |
| priorityDate |
2014-09-09^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |