| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57341227c065dbddd1d3cf801bbaa86a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76243
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-36 |
| filingDate |
2016-11-08^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-05-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e664ebe949d0f2098ef9650698fc67c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb77e607d364bef224c24f50f9813b4a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27a3e2f18ed52a5f34b0d1b11582a07c |
| publicationDate |
2018-05-22^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9978867-B1 |
| titleOfInvention |
Semiconductor substrate structures, semiconductor devices and methods for forming the same |
| abstract |
A semiconductor substrate structure includes a substrate having a first conductivity type, an oxide layer disposed on the substrate, and a semiconductor layer disposed on the oxide layer. The semiconductor substrate structure also includes a first buried layer disposed in the semiconductor layer, having a second conductivity type opposite to the first conductivity type. The semiconductor substrate structure further includes a second buried layer disposed in the semiconductor layer and above the first buried layer, having the first conductivity type, wherein the first buried layer and the second buried layer are separated by a distance. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10910492-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019067470-A1 |
| priorityDate |
2016-11-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |