| abstract |
A field emission source (10) comprises a p-type silicon substrate (1), an n-type region (8) formed into stripes in a major surface of the substrate (1), strong-field drift layers (6) which are formed on the n-type region (8) in which electrons injected from the n-type region (8) drift, and which are made of oxidized porous polysilicon, a polysilicon layer (3) formed between the strong field drift layers (6), surface electrodes (7) formed into stripes in a direction perpendicular to the stripes of the n-type region (8). A voltage is selectively applied to either the n-type region (8) or the surface electrodes (7) so as to emit electrons from predetermined areas of the surface electrodes (7). |