| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fc0a00eab3a757e8324b1e887d7ba97 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B2006-12147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B2006-12169 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B6-132
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B6-12004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B6-132
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B6-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8258 |
| filingDate |
2001-12-06^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fba6ff93bd2f5f391dac81d712440cf9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5fca8d36154b2f4abe05cc99f6e3a37
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c069ce106a65582ca199033c69141fa |
| publicationDate |
2002-12-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-02099481-A2 |
| titleOfInvention |
Semiconductor structure for an optically switched integrated device |
| abstract |
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide (28). A substrate so formed can be used to implement an optically switched device, such as a mixer (300), that utilizes optical source (380) and optical detector (330) components. |
| priorityDate |
2001-06-01^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |