| abstract |
High quality epitaxial layers of monocrystalline materials (132, 166, 170) can be grown overlying monocrystalline substrates (110, 161) by forming a compliant substrate for growing the monocrystalline layers. One way to achieve compliancy includes first growing on a silicon wafer an accommodating buffer layer (124, 164) that is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (122, 162) of silicon oxide. The amorphous interface layer (122, 162) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (124, 164). In this way, high speed interface devices (180, 182, 1022) can be fabricated along with integral silicon-based circuitry (1024, 1026) to provide an efficient, low-cost semiconductor structure. Moreover, I/O pins and their associated problems can be eliminated. |