http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-0213233-A3
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76867 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2001-06-04^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd5eae19ee5b43f3708d7be7c3d4484b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8529b27062c877e8f00f800a7faa6f68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97b22a44542905014bf649b2d9a83c11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e77fb35dec98d7343397744817ac5b8a |
| publicationDate | 2002-08-08^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-0213233-A3 |
| titleOfInvention | Formation of self-aligned passivation for interconnect to minimize electromigration |
| abstract | An interconnect opening of an integrated circuit is filled with a conductive fill with the interconnect opening being within an insulating layer on a semiconductor wafer. A seed layer of a first conductive material is deposited conformally onto sidewalls and a bottom wall of the interconnect opening. The interconnect opening is further filled with a second conductive material. The first conductive material and the second conductive material are comprised of a bulk metal, and at least one of the first conductive material and the second conductive material is a metal alloy having an alloy dopnt in the bulk metal. A self-aligned passivation aterial is a metal alloy having an alloy dopant in the bulk metal. A self-aligned passivation material of an intermetallic compound or a metal oxide is formed at the top surface of the conductive fill with the alloy dopant that segregates out. The intermetallic compound or the metal oxide is an additional passivation material between the top surface of the conductive fill and a layer of bulk passivation material deposited over the semiconductor wafer to prevent drift of the bulk metal along a bottom surface of the layer of bulk passivation material. |
| priorityDate | 2000-08-03^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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