| abstract |
The present invention relates to an enhanced sequential or non-sequential atomic layer deposition (ALD) apparatus and technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; providing a means of depositing a purer film of higher density at lower temperatures; providing a means of modulating the deposition sequence and hence the overall process rate; and providing a means of improved radical (176) generation and delivery. |