| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_67618a7ded5a526ce7e47c72c5a89182
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3c9dff9f5fa793334e116535b2ece964
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fcee931816eeba7c5517223429102f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0120945afb0e9d1739492e9e2e8777a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_077e2e116b1bdbe0a420b3e57117f09b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45563
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate |
2002-12-04^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c537b71609d6c6552786d4192a01dd0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4b4e9dec387eaac8b4e8b0a3456dc59
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d68a868f9abf342f1f1b0bb92927e75c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d72c67e8140df1603262277e195f9db0 |
| publicationDate |
2003-06-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-03048414-A1 |
| titleOfInvention |
Chemical vapor deposition reactor |
| abstract |
A chemical vapor deposition (CVD) reactor (900) comprising: a reactor chamber (950); a substrate holder (46) located within the reactor chamber; a gas inlet system (922) arranged to provide a gas flow rotating above the substrate holder; and a gas exhaust port (930). The flow characteristics of the precursor gas are controlled to equalize the thin film thickness across the substrate surface by forcing the gas into a smaller volume as it moves across the substrate. With a central exhaust, this is done by reducing the height (1506, 1524) of the reactor chamber with increasing proximity to the center (1508) of the reactor chamber so that the reactor volume per unit distance decreases as the gas moves from the inlet to the exhaust. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018223425-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103456593-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105821394-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9340875-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10526705-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023140824-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I502096-B |
| priorityDate |
2001-12-04^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |