| abstract |
A method for manufacturing a semiconductor device capable of operating at high rate and having a high quality and a high reliability. The method in which a barrier film (7) having a copper diffusion preventive function is formed on a metal wiring (9) containing copper, characterized in that the metal wiring (2) containing a catalyst metal (10) is formed by electroplating by using an electroplating solution to which the catalyst metal (10) is added, electroplating is conducted by using the catalyst metal (10) exposed on the surface of the metal wiring (2) as a catalyst, and thus a barrier film (7) having a copper diffusion preventive function is formed on the metal wiring (2). |