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filingDate 2003-11-14^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b0d7c34966dd05f52d03118611c6314
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publicationDate 2004-06-10^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2004049067-A1
titleOfInvention Method of pattern formation using ultrahigh heat resistant positive photosensitive composition
abstract In a process in which it is demanded for a photoresist pattern to have high heat resistance, for example, production of a TFT active matrix substrate, an ultrahigh heat resistant positive pattern is formed with the use of a positive photosensitive composition according to the following method of pattern formation. The method of pattern formation comprises the step of coating a substrate with a photosensitive composition comprising an alkali soluble resin (a), a photosensitive agent having a quinonediazido group (b), a photo-acid generator (c), a crosslinking agent (d) and a solvent (e) and exposing the coating to light through a mask; the step of removing exposed portions by development to thereby form a positive image; the step of effecting overall exposure of the formed positive image to light; and optionally the step of post baking. When a 1,2-naphthoquinonediazide-4-sulfonyl compound is used as the photosensitive agent having a quinonediazido group, this compound also acts as the photo-acid generator, so that the above component (c) can be omitted.
priorityDate 2002-11-27^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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