http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004112126-A1

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0be4c0a2eb8ac513cff4ec0aaac33f43
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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-183
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filingDate 2004-05-19^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66c5bb7c0c30bc435e85e546c13fafa2
publicationDate 2004-12-23^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2004112126-A1
titleOfInvention A method of preparation of an epitaxial substrate
abstract The invention relates to a method of preparation of an epitaxial substrate, in particular a GaN, a SiGe, AIN or InN epitaxial substrate. It is the object of the present invention to provide a process of preparation of an epitaxial substrate which further reduces the influence of the substrate while being at the same time economically viable. The object is solved by providing a base substrate, implanting atomic species in the base substrate to create a weak layer like zone, providing an epitaxial stiffening layer on a surface of a base substrate at a first temperature and isolating the stiffening layer at a second higher temperature, in particular together with a sub-layer of the base substrate, from the remainder of the base substrate, whereby the isolated material creates a pseudo substrate on which a homo- or heteroepitaxial layer is provided.
priorityDate 2003-06-06^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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