http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004114386-A2

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filingDate 2004-06-16^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b1066c3f671406fdacfd50bbd45e0f8
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publicationDate 2004-12-29^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2004114386-A2
titleOfInvention Methods and system for processing a microelectronic topography
abstract Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, methods are provide which include loading a topography into a chamber and supplying fluids to an enclosed area about the topography. In particular, a method is provided for forming a hydrated metal oxide layer. In addition, a method is provided for selectively depositing a dielectric layer and a metal layer upon a topography. A topography having a single layer with at least four elements lining a lower surface and sidewalls of a metal feature is also provided. A process chamber which includes a gate configured to either seal or provide an air passage to the chamber and a substrate holder comprising a clamping jaw with a lever are contemplated herein. A process chamber with a reservoir arranged above a substrate holder is also provided.
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