| abstract |
The invention relates to a new High Electron Mobility Transistor (HEMT), made essentially of layers of Group XIII element(s) nitride(s). Contrary to currently available transistors of this type, the transistor according to the invention is produced on a homosubstrate (11) made of gallium-containing nitride, has no nucleation layer and its buffer layer (3) is remarkably thinner than in known HEMTs. Preferably, at least the buffer layer (3), being a part of the transistor according to the present invention, is produced by epitaxial methods and the direction of growth of said layer in an epitaxial process is essentially perpendicular to the direction of growth of the substrate (11). The invention relates also to a method of manufacturing of High Electron Mobility Transistor (HEMT). |